Analysis and Design of W-band Phase Shifters
نویسندگان
چکیده
This thesis describes 80−94GHz and 70−77GHz interpolating phase shifters and the corresponding transmitter and receiver ICs, fabricated in 65-nm CMOS and SiGe BiCMOS technologies, respectively. Lumped inductors and transformers are employed to realize small-form factor 90◦ hybrids as needed in high density phased arrays. The CMOS transmitter exhibits absolute phase and amplitude errors of 4◦ and 4dB, respectively, at 90GHz, when the phase is varied from 0◦ to 360◦ in steps of 22.5◦. The absolute phase error in the SiGe BiCMOS receiver is less than 5◦, with a maximum gain imbalance below 3dB at 74GHz. The peak gain and power consumption are 3.8dB and 142mW from 1.2V supply for the CMOS transmitter, and 17dB and 128mW from 1.5V and 2.5V supplies for the SiGe BiCMOS receiver.
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